Currently, the laser cooling of a semiconductor is achieved when the material radiates more energy than it absorbs. Implying an almost ideal radiative efficiency, such a concept is still not technologically mature. In this theoretical work, we propose to base the cooling on the extraction of photogenerated carriers, instead of their recombination. Carriers are generated in a low gap absorber with an adapted laser. By diffusing in a larger gap reservoir, they absorb phonons and then carry thermal energy from the absorber into the reservoir. Considering a MoS2/WSe2 supperlattice for the absorber and a bulk MoS2 for the reservoir, with a dedicated model, we calculate a cooling power correspoding to 80% of the absorbed power with a low radiative efficiency of 10^-2.